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J/SST108 Series
Vishay Siliconix
N-Channel JFETs
J108 J109 J110
PRODUCT SUMMARY
Part Number
J/SST108 J/SST109 J/SST110
SST108 SST109 SST110
VGS(off) (V)
-3 to -10 -2 to -6 -0.5 to -4
rDS(on) Max (W)
8
ID(off) Typ (pA)
20 20 20
tON Typ (ns)
4 4 4
12
18
FEATURES
D D D D D Low On-Resistance: J108 <8 W Fast Switching--tON: 4 ns Low Leakage: 20 pA Low Capacitance: 11 pF Low Insertion Loss
BENEFITS
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error" Excellent Accuracy Good Frequency Response Eliminates Additional Buffering
APPLICATIONS
D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters
DESCRIPTION
The J/SST108 series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching. The SST108 series is comprised of surface-mount devices featuring the lowest rDS(on) of any TO-236 (SOT-23) JFET device. The TO-226AA (TO-92) plastic package provides a low-cost option. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products packaged in TO-206AC (TO-52), see the 2N5432/5433/5434 data sheet.
TO-226AA (TO-92)
TO-236 (SOT-23)
D
1
D
1 3 G
S
2
S
2
G
3
Top View SST108 (I8)* SST109 (I9)* SST110 (I0)* *Marking Code for TO-236
Top View J108, J109, J110
Document Number: 70231 S-04028--Rev. E, 04-Jun-01
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7-1
J/SST108 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST108 J/SST109 J/SST110
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F)
IG = -1 mA , VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 10 mA VDS = 5 V, VGS = -10 V TA = 125_C VGS = 0 V, VDS v 0.1 V IG = 1 mA , VDS = 0 V
-32
-25 -3 80 -10
-25 -2 40 -3 -3 -6
-25 V -0.5 10 -3 -4 mA
-0.01 -5 -0.01 0.02 1.0
nA 3 3 3
8 0.7
12
18
W V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs VDS = 5 V, ID = 10 mA, f = 1 kHz gos rds(on) Ciss VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 0 V VGS = 0 V f = 1 MHz VDS = 0 V VGS = -10 V f = 1 MHz SST J Series SST J Series 60 60 11 11 3.5 15 15 15 nV Hz 85 85 85 pF 0.6 8 17 mS
12
18
W
Crss en
VDG = 5 V, ID = 10 mA f = 1 kHz
Switching
Turn-On Time td(on) tr td(off) tf VDD = 1.5 V, VGS(H) = 0 V See Switching Diagram 3 1 4 18 NIP ns
Turn-Off Time
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%.
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7-2
Document Number: 70231 S-04028--Rev. E, 04-Jun-01
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage
20 rDS(on) - Drain-Source On-Resistance ( ) 1000 IDSS @ VDS = 15 V, VGS = 0 V 16 800 rDS(on) - Drain-Source On-Resistance ( ) 50
I DSS
On-Resistance vs. Drain Current
TA = 25_C
rDS @ ID = 10 mA, VGS = 0 V
- Saturation Drain Current (mA)
40 VGS(off) = -2 V 30
12
rDS
600
8
IDSS
400
20 -4 V 10 -8 V 0 1 10 ID - Drain Current (mA) 100
4
200
0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V)
0
On-Resistance vs. Temperature
40 rDS(on) - Drain-Source On-Resistance ( ) ID = 10 mA rDS changes X 0.7%/_C 32 - Drain Current (mA) VGS(off) = -2 V 24 80 100
Output Characteristics
VGS(off) = -2 V
60 VGS = 0 V -0.2 V 40 -0.4 V 20 -0.6 V -0.8 V
16 -4 V 8 -8 V
0 -55 -35 -15 5 25 45 65 85 105 125
I D
0 0 2 4 6 8 10
TA - Temperature (_C)
VDS - Drain-Source Voltage (V)
Turn-On Switching
5 tr approximately independent of ID VDD = 1.5 V, RG = 50 VGS(L) = -10 V Switching Time (ns) 30
Turn-Off Switching
td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = -10 V 24 tf 18 VGS(off) = -2 V
4 Switchng Time (ns)
3 td(on) @ ID = 10 mA
td(on) @ ID = 25 mA
2
12
VGS(off) = -8 V
1
tr
6
td(off)
0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V)
0 0 5 10 15 20 25 ID - Drain Current (mA)
Document Number: 70231 S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-3
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Capacitance vs. Gate-Source Voltage
100 VDS = 0 V f = 1 MHz 80 Capacitance (pF) 100 VGS(off) = -4 V gfs - Forward Transconductance (mS)
Transconductance vs. Drain Current
60
TA = -55_C 10
25_C 125_C
40 Ciss 20 Crss
VDS = 5 V f = 1 kHz 1
0 0 -4 -8 -12 -16 -20
1
10 ID - Drain Current (mA)
100
VGS - Gate-Source Voltage (V)
Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage
200 gfs and gos @ VDS = 5 V VGS = 0 V, f = 1 kHz 160 40 50 100
Noise Voltage vs. Frequency
VDS = 5 V gos - Output Conductance (S)
gfs - Forward Transconductance (mS)
120
gfs
30
en - Noise Voltage nV /
Hz 10 ID = 10 mA
80
gos
20
40
10
40 mA 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 1 10 100 1k f - Frequency (Hz) 10 k 100 k
Gate Leakage Current
100 nA TA = 125_C 10 nA - Gate Leakage 100
Common Gate Input Admittance
gig
5 mA
ID =10 mA 10
1 nA 1 mA IGSS @ 125_C 100 pA TA = 25_C 10 pA 10 mA 1 mA IGSS @ 25_C 1 pA 0 4 8 12 16 20 0.1 10 20 50 100 VDG - Drain-Gate Voltage (V) f - Frequency (MHz) 5 mA (mS) 1
I G
big TA = 25_C VDG = 20 V ID = 20 mA
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7-4
Document Number: 70231 S-04028--Rev. E, 04-Jun-01
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common Gate Forward Admittance
100 -gfg 10
Common Gate Reverse Admittance
TA = 25_C VDG = 20 V ID = 20 mA
10 (mS) (mS)
1.0
-grg -brg
bfg 1 TA = 25_C VDG = 20 V ID = 20 mA 0.1 10 20 f - Frequency (MHz) 50 100
0.1
0.01 10 20 50 100
f - Frequency (MHz)
Common Gate Output Admittance
100 TA = 25_C VDG = 20 V ID = 20 mA
10 bog (mS)
gog 1
0.1 10 20 f - Frequency (MHz) 50 100
SWITCHING TIME TEST CIRCUIT
J/SST108
VGS(L) RL* ID(on) *Non-inductive -12 V 150 W 10 mA
VDD
J/SST109
-7 V 150 W 10 mA
J/SST110
-5 V 150 W 10 mA VGS(H) VGS(L)
RL OUT
INPUT PULSE
Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz
SAMPLING SCOPE
Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VIN Scope
1 k
51
51
Document Number: 70231 S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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